CSD25304W1015

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Length :

1.5mm

Power Dissipation-Max :

750mW Ta

Package / Case :

6-UFBGA, DSBGA

Lead Free :

Lead Free

Number of Terminations :

6

Drain Current-Max (Abs) (ID) :

3A

Turn On Delay Time :

6 ns

Rise Time :

4ns

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

20V

Number of Pins :

6

Pbfree Code :

yes

Base Part Number :

CSD25304

Series :

NexFET™

Vgs (Max) :

±8V

Mount :

Surface Mount

Number of Elements :

1

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.15V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Width :

1.8mm

Terminal Form :

Ball

JESD-609 Code :

e1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

DS Breakdown Voltage-Min :

20V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

8V

Fall Time (Typ) :

10 ns

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Thickness :

2mm

Drain-source On Resistance-Max :

0.092Ohm

Continuous Drain Current (ID) :

3A

Height :

1mm

Rds On (Max) @ Id, Vgs :

32.5m Ω @ 1.5A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

595pF @ 10V

Turn-Off Delay Time :

24 ns

Gate Charge (Qg) (Max) @ Vgs :

4.4nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

BOTTOM

Factory Lead Time :

16 Weeks

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON