CSD25302Q2

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

49m Ω @ 3A, 4.5V

Rise Time :

13.2ns

JESD-609 Code :

e3

Turn On Delay Time :

3.2 ns

Lead Free :

Contains Lead

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Vgs(th) (Max) @ Id :

900mV @ 250μA

Package / Case :

6-SMD, Flat Leads

Nominal Vgs :

-650 mV

Series :

NexFET™

Gate Charge (Qg) (Max) @ Vgs :

3.4nC @ 4.5V

Pbfree Code :

No

Threshold Voltage :

-650mV

Continuous Drain Current (ID) :

5A

Number of Pins :

6

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±8V

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

20A

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

8V

Pin Count :

6

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

CSD25302

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

5A

FET Type :

P-Channel

Case Connection :

SOURCE

Element Configuration :

Single

Fall Time (Typ) :

1.3 ns

Turn-Off Delay Time :

8.6 ns

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 10V

Transistor Element Material :

SILICON

Number of Terminations :

6

Power Dissipation :

2.4W

Drain to Source Voltage (Vdss) :

20V

Additional Feature :

AVALANCHE RATED

ECCN Code :

EAR99

Power Dissipation-Max :

2.4W Ta

Drain to Source Breakdown Voltage :

-20V

Drain-source On Resistance-Max :

0.092Ohm