CSD25301W1015
- Mfr.Part #
- CSD25301W1015
- Manufacturer
- Texas Instruments
- Package / Case
- 6-UFBGA, DSBGA
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 2.2A 6DSBGA
- Stock
- 11,459
- In Stock :
- 11,459
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- No
- Turn-Off Delay Time :
- 29 ns
- Package / Case :
- 6-UFBGA, DSBGA
- JESD-609 Code :
- e1
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rise Time :
- 2ns
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 1A, 4.5V
- Turn On Delay Time :
- 4 ns
- Termination :
- SMD/SMT
- Lead Free :
- Contains Lead
- Feedback Cap-Max (Crss) :
- 40 pF
- Vgs (Max) :
- ±8V
- Contact Plating :
- Copper, Silver, Tin
- Drain-source On Resistance-Max :
- 0.22Ohm
- Base Part Number :
- CSD25301
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 2.2A
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A Tc
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 6
- REACH SVHC :
- No SVHC
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- P-Channel
- Radiation Hardening :
- No
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Form :
- Ball
- Number of Elements :
- 1
- Series :
- NexFET™
- Mounting Type :
- Surface Mount
- Nominal Vgs :
- 750 mV
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 1.5W Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 8V
- Drain to Source Breakdown Voltage :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 4.5V
- Pin Count :
- 6
- Fall Time (Typ) :
- 12 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 270pF @ 10V
- Mount :
- Surface Mount
- Number of Terminations :
- 6
- Power Dissipation :
- 1.5W
- Dual Supply Voltage :
- 20V
- Terminal Position :
- BOTTOM
- Datasheets
- CSD25301W1015

P-Channel Tape & Reel (TR) 75m Ω @ 1A, 4.5V ±8V 270pF @ 10V 2.5nC @ 4.5V 6-UFBGA, DSBGA
CSD25301W1015 Description
The device's design aims to produce the lowest gate charge and on resistance while maintaining outstanding thermal properties in an extremely low profile. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.
CSD25301W1015 Features
?Lowest Possible Qg and Qgd
?Minimum Footprint
?Small Profile Height of 0.62 mm
?Bp Free
? RoHS conformant
?Free of Halogen
?CSP Wafer Level Package 1 x 1.5 mm
CSD25301W1015 Applications
?Management of batteries
?Charge Switch
?Battery Security
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