CSD25211W1015

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

P-Channel

Lead Free :

Lead Free

Length :

1.5mm

Pbfree Code :

yes

Turn On Delay Time :

13.6 ns

Gate Charge (Qg) (Max) @ Vgs :

4.1nC @ 4.5V

Fall Time (Typ) :

14.2 ns

Operating Mode :

-0.8

Element Configuration :

Single

Mounting Type :

Surface Mount

Width :

1.8mm

Gate to Source Voltage (Vgs) :

-6V

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Thickness :

2mm

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 10V

Continuous Drain Current (ID) :

3.2A

Turn-Off Delay Time :

36.9 ns

Base Part Number :

CSD25211

Series :

NexFET™

Drain to Source Voltage (Vdss) :

20V

Terminal Position :

BOTTOM

Current - Continuous Drain (Id) @ 25°C :

3.2A Ta

Rds On (Max) @ Id, Vgs :

33m Ω @ 1.5A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1mm

Number of Pins :

6

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Drain to Source Breakdown Voltage :

-20V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Elements :

1

Package / Case :

6-UFBGA, DSBGA

Power Dissipation-Max :

1W Ta

Power Dissipation :

1W

ECCN Code :

EAR99

Terminal Form :

Ball

Rise Time :

8.8ns

Contact Plating :

Copper, Silver, Tin

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e1