CSD25202W15T
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- Mfr.Part #
- CSD25202W15T
- Manufacturer
- Texas Instruments
- Package / Case
- 9-UFBGA, DSBGA
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 4A 9DSBGA
- Stock
- 26,538
- In Stock ：
- 26,538
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 2A, 4.5V
- RoHS Status :
- Non-RoHS Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Drain Current-Max (Abs) (ID) :
- 4A
- Number of Channels :
- 1
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Threshold Voltage :
- -750mV
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Turn On Delay Time :
- 15 ns
- Drain to Source Voltage (Vdss) :
- 20V
- Continuous Drain Current (ID) :
- -4A
- Gate Charge (Qg) (Max) @ Vgs :
- 7.5nC @ 4.5V
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Mount :
- Surface Mount
- Base Part Number :
- CSD25202
- Series :
- NexFET™
- Rise Time :
- 12ns
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta
- Number of Terminations :
- 9
- Vgs(th) (Max) @ Id :
- 1.05V @ 250μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 9
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- DS Breakdown Voltage-Min :
- 20V
- FET Type :
- P-Channel
- Package / Case :
- 9-UFBGA, DSBGA
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Terminal Form :
- Ball
- Turn-Off Delay Time :
- 64 ns
- Gate to Source Voltage (Vgs) :
- -6V
- Width :
- 1.75mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1010pF @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Feedback Cap-Max (Crss) :
- 27 pF
- Length :
- 1.75mm
- Factory Lead Time :
- 6 Weeks
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Fall Time (Typ) :
- 28 ns
- JESD-609 Code :
- e1
- Power Dissipation-Max :
- 500mW Ta
- Height :
- 625μm
- Drain-source On Resistance-Max :
- 0.052Ohm
- Datasheets
- CSD25202W15T
P-Channel Tape & Reel (TR) 26m Ω @ 2A, 4.5V 1010pF @ 10V 7.5nC @ 4.5V 20V 9-UFBGA, DSBGA
CSD25202W15T Overview
A device's maximum input capacitance is 1010pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is -4A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 4A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 64 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is -6V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -750mV.For normal operation, maintain the DS breakdown voltage above 20V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.
CSD25202W15T Features
a continuous drain current (ID) of -4A
the turn-off delay time is 64 ns
a threshold voltage of -750mV
a 20V drain to source voltage (Vdss)
CSD25202W15T Applications
There are a lot of Texas Instruments
CSD25202W15T applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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