CSD23382F4T
- Mfr.Part #
- CSD23382F4T
- Manufacturer
- Texas Instruments
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 3.5A 3PICOSTAR
- Stock
- 90,766
- In Stock :
- 90,766
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- FemtoFET™
- Vgs (Max) :
- ±8V
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 1.35nC @ 4.5V
- Vgs(th) (Max) @ Id :
- 1.1V @ 250μA
- Fall Time (Typ) :
- 41 ns
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 3.5A Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 235pF @ 6V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- -800mV
- Peak Reflow Temperature (Cel) :
- 260
- FET Type :
- P-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Package / Case :
- 3-XFDFN
- Length :
- 1.035mm
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Number of Channels :
- 1
- Continuous Drain Current (ID) :
- -3.5A
- Width :
- 635μm
- Transistor Element Material :
- SILICON
- Rise Time :
- 25ns
- Terminal Form :
- NO LEAD
- Factory Lead Time :
- 6 Weeks
- Turn On Delay Time :
- 28 ns
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 500mW Ta
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 76m Ω @ 500mA, 4.5V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 66 ns
- Terminal Position :
- BOTTOM
- Base Part Number :
- CSD23382
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 12V
- Threshold Voltage :
- -800mV
- Mount :
- Surface Mount
- Datasheets
- CSD23382F4T

P-Channel Tape & Reel (TR) 76m Ω @ 500mA, 4.5V ±8V 235pF @ 6V 1.35nC @ 4.5V 12V 3-XFDFN
CSD23382F4T Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 235pF @ 6V.This device conducts a continuous drain current (ID) of -3.5A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 66 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 28 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be -800mV.Activation of any electrical operation happens at threshold voltage, and this transistor has -800mV threshold voltage.This transistor requires a drain-source voltage (Vdss) of 12V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).
CSD23382F4T Features
a continuous drain current (ID) of -3.5A
the turn-off delay time is 66 ns
a threshold voltage of -800mV
a 12V drain to source voltage (Vdss)
CSD23382F4T Applications
There are a lot of Texas Instruments
CSD23382F4T applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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