CSD23382F4

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

1.35nC @ 6V

Base Part Number :

CSD23382

Factory Lead Time :

6 Weeks

Continuous Drain Current (ID) :

3.5A

Fall Time (Typ) :

41 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

500mW Ta

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Turn-Off Delay Time :

66 ns

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Terminal Position :

BOTTOM

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Series :

FemtoFET™

Vgs (Max) :

±8V

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Pbfree Code :

yes

ECCN Code :

EAR99

Package / Case :

3-XFDFN

Width :

635μm

Input Capacitance (Ciss) (Max) @ Vds :

235pF @ 6V

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

76m Ω @ 500mA, 4.5V

Drain to Source Voltage (Vdss) :

12V

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Terminal Form :

NO LEAD

Rise Time :

25ns

Turn On Delay Time :

28 ns

Lead Free :

Lead Free

Length :

1.035mm

Element Configuration :

Single

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Gate to Source Voltage (Vgs) :

8V