CSD23381F4
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- Mfr.Part #
- CSD23381F4
- Manufacturer
- Texas Instruments
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 2.3A 3PICOSTAR
- Stock
- 70
- In Stock ：
- 70
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- 3-XFDFN
- Rise Time :
- 3.9ns
- Number of Pins :
- 3
- Turn On Delay Time :
- 4.5 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- P-Channel
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Vgs(th) (Max) @ Id :
- 1.2V @ 250µA
- Base Part Number :
- CSD23381
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 18 ns
- Operating Mode :
- -0.95
- Terminal Position :
- BOTTOM
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 1.14nC @ 4.5V
- Drain to Source Voltage (Vdss) :
- 12V
- Length :
- 1.035mm
- Factory Lead Time :
- 6 Weeks
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Terminal Form :
- NO LEAD
- Input Capacitance (Ciss) (Max) @ Vds :
- 236pF @ 6V
- Series :
- NexFET™
- Number of Channels :
- 1
- Continuous Drain Current (ID) :
- 2.3A
- Rds On (Max) @ Id, Vgs :
- 175m Ω @ 500mA, 4.5V
- Power Dissipation-Max :
- 500mW Ta
- Peak Reflow Temperature (Cel) :
- 260
- Current - Continuous Drain (Id) @ 25°C :
- 2.3A Ta
- Height :
- 350μm
- Width :
- 635μm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 7 ns
- Power Dissipation :
- 500mW
- Drain to Source Breakdown Voltage :
- -12V
- Gate to Source Voltage (Vgs) :
- -8V
- Datasheets
- CSD23381F4
P-Channel Tape & Reel (TR) 175m Ω @ 500mA, 4.5V 236pF @ 6V 1.14nC @ 4.5V 12V 3-XFDFN
CSD23381F4 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 236pF @ 6V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2.3A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -12V, and this device has a drainage-to-source breakdown voltage of -12VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 18 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 4.5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from -8V to 1.For this transistor to work, a voltage 12V is required between drain and source (Vdss).Using drive voltage (1.8V 4.5V), this device contributes to a reduction in overall power consumption.
CSD23381F4 Features
a continuous drain current (ID) of 2.3A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 18 ns
a 12V drain to source voltage (Vdss)
CSD23381F4 Applications
There are a lot of Texas Instruments
CSD23381F4 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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