CSD23280F3
- Mfr.Part #
- CSD23280F3
- Manufacturer
- Texas Instruments
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 1.8A 3PICOSTAR
- Stock
- 25,037
- In Stock :
- 25,037
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Part Number :
- CSD23280
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Thickness :
- 345μm
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 1.8A
- Drain-source On Resistance-Max :
- 0.25Ohm
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 234pF @ 6V
- Drain to Source Voltage (Vdss) :
- 12V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time :
- 6 Weeks
- Series :
- FemtoFET™
- Power Dissipation-Max :
- 500mW Ta
- Width :
- 600μm
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Feedback Cap-Max (Crss) :
- 11.1 pF
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 116m Ω @ 400mA, 4.5V
- Pulsed Drain Current-Max (IDM) :
- 11.4A
- Length :
- 690μm
- Gate Charge (Qg) (Max) @ Vgs :
- 1.23nC @ 4.5V
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- DS Breakdown Voltage-Min :
- 12V
- Vgs(th) (Max) @ Id :
- 0.95V @ 250μA
- FET Type :
- P-Channel
- Case Connection :
- DRAIN
- Vgs (Max) :
- -6V
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 1.8A Ta
- Package / Case :
- 3-SMD, No Lead
- Datasheets
- CSD23280F3

P-Channel Tape & Reel (TR) 116m Ω @ 400mA, 4.5V -6V 234pF @ 6V 1.23nC @ 4.5V 12V 3-SMD, No Lead
CSD23280F3 Description
The footprint of many handheld and mobile applications is reduced by the design and optimization of this -12-V, 97-m, P-Channel FemtoFETTM MOSFET. Standard tiny signal MOSFETs can be replaced with this technology while having a significantly smaller footprint. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance.
CSD23280F3 Features
? Minimal On-Resistance
? Extremely Low Qg and Qd
? High drain current operation
? Extremely small footprint: 0.73 by 0.64 millimeters
? Ultra-low profile - maximum height of 0.36 mm
CSD23280F3 Applications
? Designed with load switch applications in mind.
? Designed with general switching applications in mind
? Applications for batteries
? Mobile and handheld applications
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