CSD23203W

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Contact Plating :

Copper, Silver, Tin

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

1.8mm

Element Configuration :

Single

Number of Terminations :

6

Height :

1mm

Gate to Source Voltage (Vgs) :

-6V

Input Capacitance (Ciss) (Max) @ Vds :

914pF @ 4V

Mounting Type :

Surface Mount

Terminal Form :

Ball

Drain to Source Voltage (Vdss) :

8V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mount :

Surface Mount

Continuous Drain Current (ID) :

3A

Base Part Number :

CSD23203

Turn On Delay Time :

14 ns

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Drain to Source Breakdown Voltage :

-8V

Terminal Position :

BOTTOM

Number of Pins :

6

Thickness :

2mm

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.053Ohm

Factory Lead Time :

6 Weeks

Number of Channels :

1

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Drain Current-Max (Abs) (ID) :

3A

Package / Case :

6-UFBGA, DSBGA

Operating Mode :

ENHANCEMENT MODE

Series :

NexFET™

Gate Charge (Qg) (Max) @ Vgs :

6.3nC @ 4.5V

Length :

1.5mm

Fall Time (Typ) :

27 ns

Lead Free :

Lead Free

ECCN Code :

EAR99

Transistor Element Material :

SILICON

JESD-609 Code :

e1

Pbfree Code :

yes

Power Dissipation-Max :

750mW Ta

Rds On (Max) @ Id, Vgs :

19.4m Ω @ 1.5A, 4.5V

FET Type :

P-Channel

Number of Elements :

1

Turn-Off Delay Time :

58 ns

Rise Time :

12ns