CSD23202W10T
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- Mfr.Part #
- CSD23202W10T
- Manufacturer
- Texas Instruments
- Package / Case
- 4-UFBGA, DSBGA
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 2.2A 4DSBGA
- Stock
- 508,595
- In Stock ：
- 508,595
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Thickness :
- 650μm
- Rise Time :
- 4ns
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A Ta
- Threshold Voltage :
- -600mV
- Factory Lead Time :
- 6 Weeks
- Mount :
- Surface Mount
- Length :
- 0m
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- REACH SVHC :
- No SVHC
- Width :
- 0m
- Turn-Off Delay Time :
- 58 ns
- Package / Case :
- 4-UFBGA, DSBGA
- Turn On Delay Time :
- 9 ns
- Number of Pins :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Gate Charge (Qg) (Max) @ Vgs :
- 3.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 512pF @ 6V
- Continuous Drain Current (ID) :
- 2.2A
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- -6V
- FET Type :
- P-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- NexFET™
- Terminal Position :
- BOTTOM
- Height :
- 625μm
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Feedback Cap-Max (Crss) :
- 37 pF
- Power Dissipation-Max :
- 1W Ta
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- -12V
- Terminal Form :
- Ball
- Drain to Source Voltage (Vdss) :
- 12V
- Rds On (Max) @ Id, Vgs :
- 53m Ω @ 500mA, 4.5V
- Vgs(th) (Max) @ Id :
- 900mV @ 250μA
- Number of Channels :
- 1
- Base Part Number :
- CSD23202
- Fall Time (Typ) :
- 21 ns
- Number of Terminations :
- 4
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Datasheets
- CSD23202W10T
P-Channel Tape & Reel (TR) 53m Ω @ 500mA, 4.5V 512pF @ 6V 3.8nC @ 4.5V 12V 4-UFBGA, DSBGA
CSD23202W10T Overview
The maximum input capacitance of this device is 512pF @ 6V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2.2A.When VGS=-12V, and ID flows to VDS at -12VVDS, the drain-source breakdown voltage is -12V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 58 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 9 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -600mV volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 12V in order to operate.Using drive voltage (1.5V 4.5V), this device helps reduce its power consumption.
CSD23202W10T Features
a continuous drain current (ID) of 2.2A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 58 ns
a threshold voltage of -600mV
a 12V drain to source voltage (Vdss)
CSD23202W10T Applications
There are a lot of Texas Instruments
CSD23202W10T applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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