CSD23202W10

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Thickness :

650μm

Vgs (Max) :

-6V

Continuous Drain Current (ID) :

2.2A

Vgs(th) (Max) @ Id :

900mV @ 250μA

Fall Time (Typ) :

21 ns

Feedback Cap-Max (Crss) :

37 pF

Terminal Position :

BOTTOM

Drain to Source Voltage (Vdss) :

12V

Transistor Application :

SWITCHING

JESD-609 Code :

e1

Length :

0m

Number of Terminations :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Width :

0m

Power Dissipation-Max :

1W Ta

Factory Lead Time :

6 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

512pF @ 6V

Power Dissipation :

1W

Number of Pins :

4

Base Part Number :

CSD23202

Package / Case :

4-UFBGA, DSBGA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

FET Type :

P-Channel

Series :

NexFET™

Gate to Source Voltage (Vgs) :

6V

Turn-Off Delay Time :

58 ns

Mounting Type :

Surface Mount

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Gate Charge (Qg) (Max) @ Vgs :

3.8nC @ 4.5V

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

-12V

Current - Continuous Drain (Id) @ 25°C :

2.2A Ta

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Height :

625μm

Number of Channels :

1

Rise Time :

4ns

Element Configuration :

Single

Turn On Delay Time :

9 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

53m Ω @ 500mA, 4.5V

Terminal Form :

Ball

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ