CSD23201W10
- Mfr.Part #
- CSD23201W10
- Manufacturer
- Texas Instruments
- Package / Case
- 4-UFBGA, DSBGA
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 2.2A 4DSBGA
- Stock
- 138,270
- In Stock :
- 138,270
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Nominal Vgs :
- 600 mV
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND RESISTOR
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- No
- FET Type :
- P-Channel
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Mounting Type :
- Surface Mount
- Lead Free :
- Contains Lead
- Radiation Hardening :
- No
- Number of Pins :
- 4
- Base Part Number :
- CSD23201
- Power Dissipation :
- 1W
- Gate Charge (Qg) (Max) @ Vgs :
- 2.4nC @ 4.5V
- Rise Time :
- 19ns
- Pin Count :
- 4
- Fall Time (Typ) :
- 29 ns
- Power Dissipation-Max :
- 1W Ta
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Ball
- Dual Supply Voltage :
- 12V
- Turn On Delay Time :
- 24 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Termination :
- SMD/SMT
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A Tc
- Continuous Drain Current (ID) :
- 2.2A
- Input Capacitance (Ciss) (Max) @ Vds :
- 325pF @ 6V
- Turn-Off Delay Time :
- 68 ns
- Contact Plating :
- Copper, Silver, Tin
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 82m Ω @ 500mA, 4.5V
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 4
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Threshold Voltage :
- 600mV
- Series :
- NexFET™
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Application :
- SWITCHING
- Package / Case :
- 4-UFBGA, DSBGA
- Drain to Source Breakdown Voltage :
- 12V
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- -6V
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- JESD-609 Code :
- e1
- Datasheets
- CSD23201W10

P-Channel Tape & Reel (TR) 82m Ω @ 500mA, 4.5V 325pF @ 6V 2.4nC @ 4.5V 4-UFBGA, DSBGA
CSD23201W10 Description
The device's design aims to produce the lowest gate charge and on-resistance while maintaining outstanding thermal properties in an extremely low profile. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
CSD23201W10 Features
? Lowest Possible Qg and Qgd
?1 mm x 1 mm Small Footprint
?Small Profile Height: 0.62 mm
?Bp Free
?3kV Gate ESD Protection
?RoHS conformant
?Free of Halogen
CSD23201W10 Applications
Switching applications
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