CSD23201W10

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Mfr.Part #
CSD23201W10
Manufacturer
Texas Instruments
Package / Case
4-UFBGA, DSBGA
Datasheet
Download
Description
MOSFET P-CH 12V 2.2A 4DSBGA
Stock
138,270
In Stock :
138,270

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Manufacturer :
Texas Instruments
Product Category :
Transistors - FETs, MOSFETs - Single
Nominal Vgs :
600 mV
Number of Elements :
1
Configuration :
SINGLE WITH BUILT-IN DIODE AND RESISTOR
Peak Reflow Temperature (Cel) :
260
Pbfree Code :
No
FET Type :
P-Channel
Vgs(th) (Max) @ Id :
1V @ 250μA
Mounting Type :
Surface Mount
Lead Free :
Contains Lead
Radiation Hardening :
No
Number of Pins :
4
Base Part Number :
CSD23201
Power Dissipation :
1W
Gate Charge (Qg) (Max) @ Vgs :
2.4nC @ 4.5V
Rise Time :
19ns
Pin Count :
4
Fall Time (Typ) :
29 ns
Power Dissipation-Max :
1W Ta
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
Ball
Dual Supply Voltage :
12V
Turn On Delay Time :
24 ns
Drive Voltage (Max Rds On,Min Rds On) :
1.5V 4.5V
Termination :
SMD/SMT
Current - Continuous Drain (Id) @ 25°C :
2.2A Tc
Continuous Drain Current (ID) :
2.2A
Input Capacitance (Ciss) (Max) @ Vds :
325pF @ 6V
Turn-Off Delay Time :
68 ns
Contact Plating :
Copper, Silver, Tin
Terminal Position :
BOTTOM
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
82m Ω @ 500mA, 4.5V
Transistor Element Material :
SILICON
REACH SVHC :
No SVHC
Number of Terminations :
4
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Threshold Voltage :
600mV
Series :
NexFET™
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Transistor Application :
SWITCHING
Package / Case :
4-UFBGA, DSBGA
Drain to Source Breakdown Voltage :
12V
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
-6V
Operating Temperature :
-55°C~150°C TJ
Mount :
Surface Mount
JESD-609 Code :
e1
Datasheets
CSD23201W10
Introducing Transistors - FETs, MOSFETs - Single Texas Instruments CSD23201W10 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:4, Base Part Number:CSD23201, Number of Terminations:4, Package / Case:4-UFBGA, DSBGA, Operating Temperature:-55°C~150°C TJ, CSD23201W10 pinout, CSD23201W10 datasheet PDF, CSD23201W10 amp .Beyond Transistors - FETs, MOSFETs - Single Texas Instruments CSD23201W10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Texas Instruments CSD23201W10


P-Channel Tape & Reel (TR) 82m Ω @ 500mA, 4.5V 325pF @ 6V 2.4nC @ 4.5V 4-UFBGA, DSBGA

CSD23201W10 Description


The device's design aims to produce the lowest gate charge and on-resistance while maintaining outstanding thermal properties in an extremely low profile. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance.  In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.



CSD23201W10 Features


? Lowest Possible Qg and Qgd


?1 mm x 1 mm Small Footprint


?Small Profile Height: 0.62 mm


?Bp Free


?3kV Gate ESD Protection


?RoHS conformant


?Free of Halogen



CSD23201W10 Applications


Switching applications


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