CSD22204W

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Base Part Number :

CSD22204

Vgs(th) (Max) @ Id :

950mV @ 250μA

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

6V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

5A

JESD-609 Code :

e1

Contact Plating :

Copper, Silver, Tin

Height :

625μm

Terminal Form :

Ball

Rise Time :

600ns

Power Dissipation-Max :

1.7W Ta

Length :

1.75mm

Turn On Delay Time :

58 ns

Package / Case :

9-UFBGA, DSBGA

Mount :

Surface Mount

Vgs (Max) :

-6V

Number of Terminations :

9

Drain to Source Voltage (Vdss) :

8V

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Input Capacitance (Ciss) (Max) @ Vds :

1130pF @ 4V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Number of Pins :

9

RoHS Status :

ROHS3 Compliant

Feedback Cap-Max (Crss) :

265 pF

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

24.6nC @ 4.5V

Rds On (Max) @ Id, Vgs :

9.9m Ω @ 2A, 4.5V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Fall Time (Typ) :

2.29 μs

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

8V

Drain Current-Max (Abs) (ID) :

5A

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Series :

NexFET™

Turn-Off Delay Time :

3.45 μs

Terminal Position :

BOTTOM

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

80A

Width :

1.75mm

Number of Elements :

1

Factory Lead Time :

6 Weeks

Drain-source On Resistance-Max :

0.014Ohm