CSD22202W15

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

JESD-609 Code :

e1

FET Type :

P-Channel

Contact Plating :

Copper, Silver, Tin

Height :

625μm

Transistor Application :

SWITCHING

Package / Case :

9-UFBGA, DSBGA

RoHS Status :

ROHS3 Compliant

Feedback Cap-Max (Crss) :

250 pF

Turn On Delay Time :

10.4 ns

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Gate Charge (Qg) (Max) @ Vgs :

8.4nC @ 4.5V

Base Part Number :

CSD22202

Gate to Source Voltage (Vgs) :

-6V

Mount :

Surface Mount

Turn-Off Delay Time :

109 ns

Number of Elements :

1

Factory Lead Time :

16 Weeks

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Power Dissipation :

1.5W

Power Dissipation-Max :

1.5W Ta

Terminal Form :

Ball

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Position :

BOTTOM

Input Capacitance (Ciss) (Max) @ Vds :

1390pF @ 4V

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

48A

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Continuous Drain Current (ID) :

10A

Number of Terminations :

9

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Rise Time :

8.4ns

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

38 ns

Rds On (Max) @ Id, Vgs :

12.2m Ω @ 2A, 4.5V

Width :

1.75mm

Series :

NexFET™

Length :

1.75mm

Pbfree Code :

yes

Number of Pins :

9