CPH3462-TL-W

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

3.4nC @ 10V

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

1A

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

785m Ω @ 1A, 10V

JESD-609 Code :

e6

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

1A Ta

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.6V @ 1mA

Fall Time (Typ) :

11 ns

Power Dissipation-Max :

1W Ta

JESD-30 Code :

R-PDSO-G3

ECCN Code :

EAR99

Operating Temperature :

150°C TJ

Lead Free :

Lead Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vgs (Max) :

±20V

Contact Plating :

Tin

Terminal Position :

Dual

Pbfree Code :

yes

Published :

2012

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

1A

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Rise Time :

2.8ns

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Turn On Delay Time :

4 ns

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

7 Weeks

Transistor Element Material :

SILICON

FET Type :

N-Channel

Terminal Form :

Gull wing

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

100V

Turn-Off Delay Time :

17 ns

Input Capacitance (Ciss) (Max) @ Vds :

155pF @ 20V

Drain-source On Resistance-Max :

0.785Ohm