CPH3356-TL-W
- Mfr.Part #
- CPH3356-TL-W
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 2.5A 3CPH
- Stock
- 41,956
- In Stock :
- 41,956
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 2.5A
- Factory Lead Time :
- 6 Weeks
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 20V
- Reach Compliance Code :
- not_compliant
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- JESD-30 Code :
- R-PDSO-G3
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Gate to Source Voltage (Vgs) :
- 10V
- Turn On Delay Time :
- 5.7 ns
- Drain-source On Resistance-Max :
- 0.137Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2005
- Turn-Off Delay Time :
- 34 ns
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Vgs (Max) :
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 10V
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 2.5A Ta
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 137m Ω @ 1A, 4.5V
- FET Type :
- P-Channel
- Rise Time :
- 11ns
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 20 ns
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 1W Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 3.3nC @ 4.5V
- JESD-609 Code :
- e6
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 1.4V @ 1mA
- Datasheets
- CPH3356-TL-W

P-Channel Tape & Reel (TR) 137m Ω @ 1A, 4.5V ±10V 250pF @ 10V 3.3nC @ 4.5V 20V TO-236-3, SC-59, SOT-23-3
CPH3356-TL-W Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 250pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2.5A amps.It is [34 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 5.7 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.The DS breakdown voltage should be maintained above 20V to maintain normal operation.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).
CPH3356-TL-W Features
a continuous drain current (ID) of 2.5A
the turn-off delay time is 34 ns
a 20V drain to source voltage (Vdss)
CPH3356-TL-W Applications
There are a lot of ON Semiconductor
CPH3356-TL-W applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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