CPH3351-TL-W

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

19 ns

Published :

2012

Power Dissipation :

1W

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Operating Temperature :

150°C TJ

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Threshold Voltage :

-1.2V

Lead Free :

Lead Free

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

250m Ω @ 1A, 10V

Turn-Off Delay Time :

34 ns

Height :

1.05mm

Input Capacitance (Ciss) (Max) @ Vds :

262pF @ 20V

Reach Compliance Code :

not_compliant

Turn On Delay Time :

5.1 ns

Contact Plating :

Tin

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

-1.8A

Drain to Source Breakdown Voltage :

-60V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

1.8A Ta

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2.6V @ 1mA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Channels :

1

Factory Lead Time :

7 Weeks

Terminal Form :

Gull wing

JESD-609 Code :

e6

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.25Ohm

Max Junction Temperature (Tj) :

150°C

JESD-30 Code :

R-PDSO-G3

Drain to Source Voltage (Vdss) :

60V

Power Dissipation-Max :

1W Ta

Mount :

Surface Mount

Terminal Position :

Dual

Rise Time :

5.4ns