CPH3350-TL-W

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

1.437803g

Number of Channels :

1

JESD-609 Code :

e6

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

3A

Mount :

Surface Mount

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

3A

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Vgs (Max) :

±10V

Published :

2012

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Number of Pins :

3

Pbfree Code :

yes

Factory Lead Time :

4 Weeks

Rise Time :

26ns

Drain to Source Voltage (Vdss) :

20V

Turn On Delay Time :

8.1 ns

Gate Charge (Qg) (Max) @ Vgs :

4.6nC @ 4.5V

Terminal Position :

Dual

Lead Free :

Lead Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drain to Source Breakdown Voltage :

-20V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Fall Time (Typ) :

37 ns

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

1W Ta

Input Capacitance (Ciss) (Max) @ Vds :

375pF @ 10V

Gate to Source Voltage (Vgs) :

10V

Rds On (Max) @ Id, Vgs :

83m Ω @ 1.5A, 4.5V

Turn-Off Delay Time :

42 ns

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Power Dissipation :

1W

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)