CE3514M4-C2

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - FETs, MOSFETs - RF

Current - Test :

15mA

Terminal Position :

Dual

Voltage - Test :

2V

DS Breakdown Voltage-Min :

3V

Packaging :

Tape and Reel (TR)

Gain :

12.2dB

Pbfree Code :

yes

Frequency :

12GHz

Number of Elements :

1

Transistor Type :

pHEMT FET

JESD-30 Code :

R-PDSO-F4

Noise Figure :

0.62dB

Surface Mount :

yes

Operating Temperature (Min) :

-55°C

Current Rating (Amps) :

68mA

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated :

4V

FET Technology :

JUNCTION

Operating Mode :

Depletion Mode

Package / Case :

4-SMD, Flat Leads

Power - Output :

125mW

Drain Current-Max (Abs) (ID) :

0.015A

Configuration :

Single

Factory Lead Time :

7 Weeks

RoHS Status :

ROHS3 Compliant

Number of Terminations :

4

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Operating Temperature (Max) :

125°C