CE3514M4

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - FETs, MOSFETs - RF

Voltage - Test :

2V

Transistor Element Material :

SILICON

FET Technology :

JUNCTION

JESD-30 Code :

R-PDSO-F4

Terminal Position :

Dual

Power - Output :

125mW

Noise Figure :

0.62dB

Package / Case :

4-SMD, Flat Leads

Number of Elements :

1

Transistor Type :

pHEMT FET

Number of Terminations :

4

Operating Temperature (Max) :

125°C

Drain Current-Max (Abs) (ID) :

0.015A

Current - Test :

10mA

Current Rating :

15mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

7 Weeks

Pbfree Code :

yes

DS Breakdown Voltage-Min :

3V

RoHS Status :

ROHS3 Compliant

Frequency :

12GHz

Operating Temperature (Min) :

-55°C

Polarity/Channel Type :

N-Channel

Voltage - Rated :

4V

Operating Mode :

Depletion Mode

Packaging :

Strip

Surface Mount :

yes

Configuration :

Single

Transistor Application :

AMPLIFIER

Gain :

12.2dB