BZB84-C56215

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Test Current :

2mA

JESD-609 Code :

e3

Diode Type :

ZENER DIODE

Published :

2009

Number of Elements :

2

Zener Voltage :

56V

Reference Voltage :

56V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Contact Plating :

Tin

ESD Protection :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Common Anode

Impedance :

200Ohm

Voltage - Forward (Vf) (Max) @ If :

900mV @ 10mA

Reference Standard :

AEC-Q101; IEC-60134

ECCN Code :

EAR99

Configuration :

1 Pair Common Anode

Tolerance :

±5%

Voltage Tol-Max :

5%

Mount :

Surface Mount

Polarity :

Unidirectional

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

300mW

JEDEC-95 Code :

TO-236AB

Time@Peak Reflow Temperature-Max (s) :

30

Max Operating Temperature :

150°C

Impedance-Max :

200Ohm

Terminal Form :

Gull wing

Current - Reverse Leakage @ Vr :

50nA @ 39.2V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-G3

Max Reverse Leakage Current :

50nA

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

HTS Code :

8541.10.00.50

Diode Element Material :

SILICON

Mounting Type :

Surface Mount