BZB84-C2V4,215

Manufacturer :

NXP Semiconductors

Product Category :

Diodes - Zener - Arrays

HTS Code :

8541.10.00.50

Max Reverse Leakage Current :

50μA

Max Operating Temperature :

150°C

Diode Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

Voltage - Forward (Vf) (Max) @ If :

900mV @ 10mA

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

ECCN Code :

EAR99

Terminal Position :

Dual

Current - Reverse Leakage @ Vr :

50μA @ 1V

Test Current :

5mA

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G3

Reference Voltage :

2.4V

Tolerance :

±5%

Mount :

Surface Mount

ESD Protection :

No

Packaging :

Tape and Reel (TR)

JEDEC-95 Code :

TO-236AB

Impedance-Max :

100Ohm

Factory Lead Time :

4 Weeks

Configuration :

1 Pair Common Anode

Published :

2009

Number of Terminations :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Diode Type :

ZENER DIODE

Number of Elements :

2

Polarity :

Unidirectional

Impedance :

100Ohm

Reference Standard :

AEC-Q101; IEC-60134

Terminal Form :

Gull wing

Min Operating Temperature :

-55°C

Voltage Tol-Max :

5%

Element Configuration :

Common Anode

Zener Voltage :

2.4V

Max Power Dissipation :

300mW

Pin Count :

3