BZB84-B62,215

Manufacturer :

NXP Semiconductors

Product Category :

Diodes - Zener - Arrays

Diode Type :

ZENER DIODE

Number of Elements :

2

Max Reverse Leakage Current :

50nA

Current - Reverse Leakage @ Vr :

50nA @ 43.4V

Time@Peak Reflow Temperature-Max (s) :

30

Contact Plating :

Tin

Number of Terminations :

3

Terminal Position :

Dual

JESD-609 Code :

e3

Factory Lead Time :

4 Weeks

Test Current :

2mA

Published :

2009

Min Operating Temperature :

-55°C

JESD-30 Code :

R-PDSO-G3

Max Power Dissipation :

300mW

Reference Voltage :

62V

Mount :

Surface Mount

Impedance :

215Ohm

Voltage - Forward (Vf) (Max) @ If :

900mV @ 10mA

ESD Protection :

No

Peak Reflow Temperature (Cel) :

260

Zener Voltage :

62V

RoHS Status :

ROHS3 Compliant

Diode Element Material :

SILICON

Mounting Type :

Surface Mount

Tolerance :

±2%

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

HTS Code :

8541.10.00.50

Voltage Tol-Max :

2%

Configuration :

1 Pair Common Anode

Package / Case :

TO-236-3, SC-59, SOT-23-3

Polarity :

Unidirectional

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

JEDEC-95 Code :

TO-236AB

Max Operating Temperature :

150°C

Pin Count :

3

Element Configuration :

Common Anode

Reference Standard :

AEC-Q101; IEC-60134

Impedance-Max :

215Ohm