BZB84-B56,215

Manufacturer :

NXP Semiconductors

Product Category :

Diodes - Zener - Arrays

JEDEC-95 Code :

TO-236AB

Current - Reverse Leakage @ Vr :

50nA @ 39.2V

Terminal Position :

Dual

JESD-609 Code :

e3

Impedance-Max :

200Ohm

HTS Code :

8541.10.00.50

Diode Element Material :

SILICON

Tolerance :

±2%

Zener Voltage :

56V

Voltage - Forward (Vf) (Max) @ If :

900mV @ 10mA

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G3

ESD Protection :

No

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

300mW

Element Configuration :

Common Anode

Mounting Type :

Surface Mount

Mount :

Surface Mount

Published :

2009

Impedance :

200Ohm

ECCN Code :

EAR99

Reference Standard :

AEC-Q101; IEC-60134

Voltage Tolerance :

2%

Max Operating Temperature :

150°C

Power Dissipation :

40W

Pin Count :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

1 Pair Common Anode

Reference Voltage :

56V

Time@Peak Reflow Temperature-Max (s) :

30

Min Operating Temperature :

-55°C

Max Reverse Leakage Current :

50nA

Factory Lead Time :

4 Weeks

Voltage Tol-Max :

2%

Number of Elements :

2

Diode Type :

ZENER DIODE

Packaging :

Tape and Reel (TR)

Polarity :

Unidirectional

Terminal Form :

Gull wing

Test Current :

2mA

Contact Plating :

Tin