BZB84-B33,215

Manufacturer :

NXP Semiconductors

Product Category :

Diodes - Zener - Arrays

Test Current :

2mA

Voltage Tol-Max :

2%

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Impedance :

80Ohm

Configuration :

1 Pair Common Anode

Terminal Form :

Gull wing

Polarity :

Unidirectional

Number of Terminations :

3

Current - Reverse Leakage @ Vr :

50nA @ 23.1V

Element Configuration :

Common Anode

Terminal Position :

Dual

Reference Voltage :

33V

HTS Code :

8541.10.00.50

Max Reverse Leakage Current :

50nA

Max Power Dissipation :

300mW

Published :

2009

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Number of Elements :

2

Voltage - Forward (Vf) (Max) @ If :

900mV @ 10mA

Tolerance :

±2%

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Reference Standard :

AEC-Q101; IEC-60134

Min Operating Temperature :

-55°C

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

JESD-30 Code :

R-PDSO-G3

Impedance-Max :

80Ohm

Max Operating Temperature :

150°C

ESD Protection :

No

JEDEC-95 Code :

TO-236AB

Diode Type :

ZENER DIODE

Zener Voltage :

33V

Diode Element Material :

SILICON

JESD-609 Code :

e3

Mounting Type :

Surface Mount