BZB84-B30,215

Manufacturer :

NXP Semiconductors

Product Category :

Diodes - Zener - Arrays

Reference Voltage :

30V

Diode Type :

ZENER DIODE

Impedance-Max :

80Ohm

Max Power Dissipation :

300mW

Published :

2009

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Common Anode

Min Operating Temperature :

-55°C

Max Reverse Leakage Current :

50nA

Configuration :

1 Pair Common Anode

Mount :

Surface Mount

Terminal Form :

Gull wing

Max Operating Temperature :

150°C

Pin Count :

3

Polarity :

Unidirectional

Current - Reverse Leakage @ Vr :

50nA @ 21V

Voltage - Forward (Vf) (Max) @ If :

900mV @ 10mA

Voltage Tolerance :

2%

Number of Elements :

2

ESD Protection :

No

Power Dissipation :

300mW

Time@Peak Reflow Temperature-Max (s) :

30

Voltage Tol-Max :

2%

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Impedance :

80Ohm

HTS Code :

8541.10.00.50

Tolerance :

±2%

Zener Current :

200mA

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G3

Number of Terminations :

3

Factory Lead Time :

4 Weeks

Package / Case :

TO-236-3, SC-59, SOT-23-3

Test Current :

2mA

Reference Standard :

AEC-Q101; IEC-60134

JEDEC-95 Code :

TO-236AB

Terminal Position :

Dual

Diode Element Material :

SILICON

Contact Plating :

Tin

Zener Voltage :

30V