BXL4001
- Mfr.Part #
- BXL4001
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 85A TO220
- Stock
- 46,268
- In Stock :
- 46,268
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 260 ns
- Rise Time :
- 340ns
- Radiation Hardening :
- No
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-220AB
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
- Drain-source On Resistance-Max :
- 0.0124Ohm
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 75 ns
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Operating Temperature :
- 150°C TJ
- Packaging :
- Bulk
- Continuous Drain Current (ID) :
- 85A
- Drain to Source Voltage (Vdss) :
- 75V
- Published :
- 2009
- HTS Code :
- 8541.29.00.95
- Avalanche Energy Rating (Eas) :
- 211 mJ
- JESD-30 Code :
- R-PSFM-T3
- DS Breakdown Voltage-Min :
- 75V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 1.75W Ta 75W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 85A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 6700pF @ 20V
- Pulsed Drain Current-Max (IDM) :
- 340A
- Fall Time (Typ) :
- 170 ns
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 12.4m Ω @ 43A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 115nC @ 10V
- Mount :
- Through Hole
- Terminal Position :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-220-3
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- RoHS Compliant
- Vgs (Max) :
- ±20V
- Datasheets
- BXL4001
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N-Channel Bulk 12.4m Ω @ 43A, 10V ±20V 6700pF @ 20V 115nC @ 10V 75V TO-220-3
BXL4001 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 211 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6700pF @ 20V.This device has a continuous drain current (ID) of [85A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 260 ns.A maximum pulsed drain current of 340A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 75 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 75V.In order to operate this transistor, a voltage of 75V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
BXL4001 Features
the avalanche energy rating (Eas) is 211 mJ
a continuous drain current (ID) of 85A
the turn-off delay time is 260 ns
based on its rated peak drain current 340A.
a 75V drain to source voltage (Vdss)
BXL4001 Applications
There are a lot of ON Semiconductor
BXL4001 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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