BUZ80A

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

SIPMOS®

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-3

Number of Terminations :

3

Number of Elements :

1

Transistor Element Material :

SILICON

Terminal Finish :

Tin/Lead (Sn/Pb)

Vgs(th) (Max) @ Id :

4V @ 1mA

Power Dissipation-Max :

100W Tc

Drain to Source Voltage (Vdss) :

800V

Rds On (Max) @ Id, Vgs :

3 Ω @ 2A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

FET Type :

N-Channel

Continuous Drain Current (ID) :

3.6A

JEDEC-95 Code :

TO-220AB

Drain Current-Max (Abs) (ID) :

3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e0

Drain-source On Resistance-Max :

3Ohm

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

320 mJ

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 25V

Pin Count :

3

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

800V

Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

RoHS Status :

Non-RoHS Compliant

Pulsed Drain Current-Max (IDM) :

12A

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Reach Compliance Code :

Unknown