BUZ21

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 1mA

Series :

SIPMOS®

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

FET Type :

N-Channel

Terminal Position :

Single

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Number of Elements :

1

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

19A

Terminal Finish :

TIN LEAD

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

85m Ω @ 13A, 10V

Pulsed Drain Current-Max (IDM) :

75A

Input Capacitance (Ciss) (Max) @ Vds :

1.3pF @ 25V

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

100V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Pbfree Code :

No

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Drain-source On Resistance-Max :

0.1Ohm

Surface Mount :

No

JESD-609 Code :

e0

Qualification Status :

COMMERCIAL

JEDEC-95 Code :

TO-220AB

Drain to Source Voltage (Vdss) :

100V

Package / Case :

TO-220-3