BUK9Y15-60E
- Mfr.Part #
- BUK9Y15-60E
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- BUK9Y15-60E - N-CHANNEL 60 V, 15
- Stock
- 28,314
- In Stock :
- 28,314
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- JESD-609 Code :
- e3
- Reach Compliance Code :
- not_compliant
- Terminal Form :
- Gull wing
- Continuous Drain Current (ID) :
- 53A
- Published :
- 2014
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Vgs (Max) :
- ±10V
- Vgs(th) (Max) @ Id :
- 2.1V @ 1mA
- Max Dual Supply Voltage :
- 60V
- Number of Channels :
- 1
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 53A Tc
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 15A, 10V
- Element Configuration :
- Single
- Power Dissipation-Max :
- 95W Tc
- Power Dissipation :
- 95W
- Fall Time (Typ) :
- 15.3 ns
- Surface Mount :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- Additional Feature :
- AVALANCHE RATED
- FET Type :
- N-Channel
- Pin Count :
- 4
- Case Connection :
- DRAIN
- Terminal Finish :
- Tin (Sn)
- Drain to Source Breakdown Voltage :
- 60V
- Turn-Off Delay Time :
- 25.2 ns
- JEDEC-95 Code :
- MO-235
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 11.4 ns
- Number of Terminations :
- 4
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 17.3ns
- Number of Pins :
- 4
- Input Capacitance (Ciss) (Max) @ Vds :
- 2603pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Gate Charge (Qg) (Max) @ Vgs :
- 17.2nC @ 5V
- Number of Elements :
- 1
- Package / Case :
- SC-100, SOT-669
- Gate to Source Voltage (Vgs) :
- 10V
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 12 Weeks
- Datasheets
- BUK9Y15-60E
Specialized ICs NXP Semiconductors BUK9Y15-60E Overview
The Specialized ICs NXP Semiconductors BUK9Y15-60E represents a robust solution for high-efficiency power switching applications. This N-channel MOSFET is designed to deliver optimal performance with a low on-state resistance of 13mΩ at 15A, 10V, providing significant energy savings in a wide range of applications. Its compact SC-100, SOT-669 package is engineered for space-sensitive installations, making it a preferred choice for advanced electrical designs. Moreover, the device features excellent thermal characteristics that ensure reliable operation under various environmental conditions.
Key Features
This device boasts several key features that make it highly advantageous for power management solutions:
- Low on-state resistance of 13mΩ at 15A, 10V enhances overall efficiency.
- High gate threshold voltage of ±10V, suitable for robust applications.
- Input capacitance of 2603pF at 25V and gate charge of 17.2nC at 5V, facilitating rapid switching operations.
- Designed for easy integration into various circuit layouts with its compact footprint.
Applications
The Specialized ICs NXP Semiconductors BUK9Y15-60E is versatile for numerous industrial applications, including:
- Uninterruptible Power Supplies (UPS)
- AC-DC Power Supplies
- Synchronous Rectification in ATX1 Server, Telecom PSU
- Motor Drives
- Micro Solar Inverters
- DC/DC Converters
- Power Tools
- Battery Protection Circuits
These applications benefit from the device's high efficiency and reliability in continuous operation.
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