BUK9Y113-100E115

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

5V

Number of Pins :

4

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

15V

Max Dual Supply Voltage :

100V

Mounting Type :

Surface Mount

Number of Terminations :

4

Power Dissipation-Max :

45W Tc

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Published :

2013

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

Automotive, AEC-Q101, TrenchMOS™

Terminal Finish :

Tin (Sn)

JEDEC-95 Code :

MO-235

Turn On Delay Time :

6.2 ns

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

8.4nC @ 5V

Continuous Drain Current (ID) :

12A

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Package / Case :

SC-100, SOT-669

Vgs (Max) :

±10V

Number of Channels :

1

FET Type :

N-Channel

Number of Elements :

1

Fall Time (Typ) :

9.3 ns

Rds On (Max) @ Id, Vgs :

110m Ω @ 5A, 10V

Reach Compliance Code :

not_compliant

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 25V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

12.4 ns

Rise Time :

10.8ns

Pin Count :

4