BUK9Y11-30B,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Factory Lead Time :

12 Weeks

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Width :

6.35mm

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1614pF @ 25V

Case Connection :

DRAIN

Package / Case :

SC-100, SOT-669

Element Configuration :

Single

Max Dual Supply Voltage :

30V

Number of Pins :

4

Fall Time (Typ) :

42 ns

Vgs (Max) :

±15V

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

Published :

2007

Gate to Source Voltage (Vgs) :

15V

Continuous Drain Current (ID) :

59A

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 1mA

Weight :

4.535924g

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.012Ohm

Gate Charge (Qg) (Max) @ Vgs :

16.5nC @ 5V

Drain to Source Breakdown Voltage :

30V

Rise Time :

33ns

Number of Terminations :

4

JEDEC-95 Code :

MO-235

Avalanche Energy Rating (Eas) :

112 mJ

Transistor Element Material :

SILICON

Height :

6.35mm

Power Dissipation-Max :

75W Tc

Turn On Delay Time :

14 ns

Rds On (Max) @ Id, Vgs :

9m Ω @ 25A, 10V

Series :

Automotive, AEC-Q101, TrenchMOS™

Pin Count :

4

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

239A

Current - Continuous Drain (Id) @ 25°C :

59A Tc

Additional Feature :

LOGIC LEVEL COMPATIBLE

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

62 ns

Length :

6.35mm

Mounting Type :

Surface Mount

Power Dissipation :

75W

JESD-609 Code :

e3