BUK9Y07-30B115

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2V @ 1mA

JEDEC-95 Code :

MO-235

Rise Time :

64.5ns

Vgs (Max) :

±15V

JESD-609 Code :

e3

Fall Time (Typ) :

64.8 ns

Number of Pins :

4

Power Dissipation :

105W

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Series :

Automotive, AEC-Q101, TrenchMOS™

Max Dual Supply Voltage :

30V

Contact Plating :

Tin

Package / Case :

SC-100, SOT-669

Gate to Source Voltage (Vgs) :

15V

Rds On (Max) @ Id, Vgs :

6m Ω @ 25A, 10V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Turn On Delay Time :

25.9 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

75A

Pin Count :

4

Power Dissipation-Max :

105W Tc

Case Connection :

DRAIN

Additional Feature :

LOGIC LEVEL COMPATIBLE

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

82.3 ns

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

Terminal Position :

Single

Transistor Application :

SWITCHING

Published :

2010

Terminal Form :

Gull wing

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

356A

Radiation Hardening :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

28.1nC @ 5V

Drain-source On Resistance-Max :

0.008Ohm

Number of Terminations :

4

FET Type :

N-Channel