BUK9M85-60E

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Mfr.Part #
BUK9M85-60E
Manufacturer
Nexperia
Package / Case
SOT-1210, 8-LFPAK33
Datasheet
Download
Description
BUK9M85-60E - N-CHANNEL 60 V, 85
Stock
27,874
In Stock :
27,874

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Manufacturer :
Nexperia
Product Category :
Specialized ICs
Package / Case :
SOT-1210, 8-LFPAK33
Published :
2016
Case Connection :
DRAIN
Gate Charge (Qg) (Max) @ Vgs :
4.4nC @ 5V
Continuous Drain Current (ID) :
12.8A
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
12.8A Tc
Packaging :
Tape and Reel (TR)
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
26 Weeks
Vgs (Max) :
±10V
Series :
Automotive, AEC-Q101, TrenchMOS™
Terminal Position :
Single
Input Capacitance (Ciss) (Max) @ Vds :
434pF @ 25V
Number of Terminations :
4
FET Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max :
0.085Ohm
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSSO-G4
Terminal Form :
Gull wing
Avalanche Energy Rating (Eas) :
4.55 mJ
Mounting Type :
Surface Mount
Pulsed Drain Current-Max (IDM) :
51A
Mount :
Surface Mount
Power Dissipation-Max :
31W Tc
Pin Count :
8
Drive Voltage (Max Rds On,Min Rds On) :
5V
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
2.1V @ 1mA
DS Breakdown Voltage-Min :
60V
Drain to Source Voltage (Vdss) :
60V
Operating Temperature :
-55°C~175°C TJ
Reference Standard :
AEC-Q101; IEC-60134
Rds On (Max) @ Id, Vgs :
73m Ω @ 5A, 10V
Introducing Specialized ICs Nexperia BUK9M85-60E from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-1210, 8-LFPAK33, Number of Terminations:4, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, BUK9M85-60E pinout, BUK9M85-60E datasheet PDF, BUK9M85-60E amp .Beyond Specialized ICs Nexperia BUK9M85-60E ,we also offer AD8232ACPZ-R7, TDA21470AUMA1, DS2413P+, Our vast inventory has you covered. Contact us now for immediate solutions.



Specialized ICs Nexperia BUK9M85-60E Overview


The Specialized ICs Nexperia BUK9M85-60E is a robust N-channel MOSFET designed for high-efficiency applications requiring a balance of speed and power handling capability. This device offers an exceptional RDS(on) of only 73m Ω at 10V, making it suitable for heavy-duty switching environments. With a maximum drain-source voltage (Vdss) of 60V, it can safely handle moderate to high voltage requirements. The MOSFET features a gate charge of 4.4nC at 5V, optimizing the trade-off between switching speed and power loss, and is housed in a compact SOT-1210, 8-LFPAK33 package, ideal for space-constrained applications. Its avalanche energy rating of 4.55mJ ensures durability under sudden voltage spikes, thus improving its reliability in unpredictable environments. The capacitance of 434pF at 25V facilitates efficient AC handling characteristics.

Specialized ICs Nexperia BUK9M85-60E Key Features


The device boasts several key features enhancing its suitability for a range of applications:
  • Avalanche energy rating (Eas) of 4.55 mJ, providing robustness against power surges.
  • Low on-resistance of 73m Ω at 10V, enabling efficient operation with minimal heat generation.
  • High continuous drain current (ID) of 12.8A with a peak drain current of 51A, supporting high power applications.
  • Drain to source voltage (Vdss) of 60V, suitable for many medium voltage applications.
  • Input capacitance of 434pF at 25V, optimizing the MOSFET for AC applications.

Specialized ICs Nexperia BUK9M85-60E Applications


The versatility of the Specialized ICs Nexperia BUK9M85-60E MOSFET allows it to be utilized in various demanding applications:
  • Efficient synchronous rectification in ATX server and telecom power supply units (PSU).
  • Driving motors in both power tools and industrial motor drives.
  • Key component in uninterruptible power supplies (UPS), ensuring power stability and reliability.
  • Conversion systems in micro solar inverters, contributing to renewable energy solutions.
  • DC/DC converters, critical for voltage step-up or step-down operations in electronic devices.
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