BUK9M85-60E
- Mfr.Part #
- BUK9M85-60E
- Manufacturer
- Nexperia
- Package / Case
- SOT-1210, 8-LFPAK33
- Datasheet
- Download
- Description
- BUK9M85-60E - N-CHANNEL 60 V, 85
- Stock
- 27,874
- In Stock :
- 27,874
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- Manufacturer :
- Nexperia
- Product Category :
- Specialized ICs
- Package / Case :
- SOT-1210, 8-LFPAK33
- Published :
- 2016
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 4.4nC @ 5V
- Continuous Drain Current (ID) :
- 12.8A
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 12.8A Tc
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 26 Weeks
- Vgs (Max) :
- ±10V
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 434pF @ 25V
- Number of Terminations :
- 4
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain-source On Resistance-Max :
- 0.085Ohm
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSSO-G4
- Terminal Form :
- Gull wing
- Avalanche Energy Rating (Eas) :
- 4.55 mJ
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 51A
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 31W Tc
- Pin Count :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 2.1V @ 1mA
- DS Breakdown Voltage-Min :
- 60V
- Drain to Source Voltage (Vdss) :
- 60V
- Operating Temperature :
- -55°C~175°C TJ
- Reference Standard :
- AEC-Q101; IEC-60134
- Rds On (Max) @ Id, Vgs :
- 73m Ω @ 5A, 10V
- Datasheets
- BUK9M85-60E
BUK9M85-60E Documents
Specialized ICs Nexperia BUK9M85-60E Overview
The Specialized ICs Nexperia BUK9M85-60E is a robust N-channel MOSFET designed for high-efficiency applications requiring a balance of speed and power handling capability. This device offers an exceptional RDS(on) of only 73m Ω at 10V, making it suitable for heavy-duty switching environments. With a maximum drain-source voltage (Vdss) of 60V, it can safely handle moderate to high voltage requirements. The MOSFET features a gate charge of 4.4nC at 5V, optimizing the trade-off between switching speed and power loss, and is housed in a compact SOT-1210, 8-LFPAK33 package, ideal for space-constrained applications. Its avalanche energy rating of 4.55mJ ensures durability under sudden voltage spikes, thus improving its reliability in unpredictable environments. The capacitance of 434pF at 25V facilitates efficient AC handling characteristics.
Specialized ICs Nexperia BUK9M85-60E Key Features
The device boasts several key features enhancing its suitability for a range of applications:
- Avalanche energy rating (Eas) of 4.55 mJ, providing robustness against power surges.
- Low on-resistance of 73m Ω at 10V, enabling efficient operation with minimal heat generation.
- High continuous drain current (ID) of 12.8A with a peak drain current of 51A, supporting high power applications.
- Drain to source voltage (Vdss) of 60V, suitable for many medium voltage applications.
- Input capacitance of 434pF at 25V, optimizing the MOSFET for AC applications.
Specialized ICs Nexperia BUK9M85-60E Applications
The versatility of the Specialized ICs Nexperia BUK9M85-60E MOSFET allows it to be utilized in various demanding applications:
- Efficient synchronous rectification in ATX server and telecom power supply units (PSU).
- Driving motors in both power tools and industrial motor drives.
- Key component in uninterruptible power supplies (UPS), ensuring power stability and reliability.
- Conversion systems in micro solar inverters, contributing to renewable energy solutions.
- DC/DC converters, critical for voltage step-up or step-down operations in electronic devices.
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