BUK9907-55ATE,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Reach Compliance Code :

not_compliant

Packaging :

Tube

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Input Capacitance (Ciss) (Max) @ Vds :

5836pF @ 25V

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T5

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

500 mJ

Published :

2008

Drain Current-Max (Abs) (ID) :

75A

Gate Charge (Qg) (Max) @ Vgs :

108nC @ 5V

Pin Count :

5

Power Dissipation-Max :

272W Tc

Transistor Application :

SWITCHING

Number of Terminations :

5

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Number of Elements :

1

DS Breakdown Voltage-Min :

55V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2V @ 1mA

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

HTS Code :

8541.29.00.75

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

No

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

6.2m Ω @ 50A, 10V

Series :

TrenchMOS™

Drain to Source Voltage (Vdss) :

55V

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

560A

Case Connection :

DRAIN

Vgs (Max) :

±15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Temperature Sensing Diode

Drain-source On Resistance-Max :

0.0077Ohm

Package / Case :

TO-220-5