BUK9675-55A118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Packaging :

Tape and Reel (TR)

Published :

2010

JESD-30 Code :

R-PSSO-G2

Contact Plating :

Tin

JESD-609 Code :

e3

Case Connection :

DRAIN

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Max Dual Supply Voltage :

55V

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Vgs(th) (Max) @ Id :

2V @ 1mA

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±10V

Continuous Drain Current (ID) :

20A

Surface Mount :

yes

Power Dissipation-Max :

62W Tc

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

10V

Rds On (Max) @ Id, Vgs :

68m Ω @ 10A, 10V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Power Dissipation :

62W

Drain to Source Breakdown Voltage :

55V

Fall Time (Typ) :

33 ns

Turn-Off Delay Time :

28 ns

Transistor Application :

SWITCHING

Number of Terminations :

2

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

Automotive, AEC-Q101, TrenchMOS™

Avalanche Energy Rating (Eas) :

72 mJ

Rise Time :

47ns

Turn On Delay Time :

10 ns

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

643pF @ 25V