BUK9675-100A118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Input Capacitance (Ciss) (Max) @ Vds :

1704pF @ 25V

Vgs(th) (Max) @ Id :

2V @ 1mA

Fall Time (Typ) :

57 ns

Power Dissipation :

98W

Number of Pins :

3

Max Dual Supply Voltage :

100V

Turn-Off Delay Time :

58 ns

Avalanche Energy Rating (Eas) :

100 mJ

Turn On Delay Time :

13 ns

Contact Plating :

Tin

Factory Lead Time :

12 Weeks

Number of Elements :

1

HTS Code :

8541.29.00.75

Radiation Hardening :

No

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

72m Ω @ 10A, 10V

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

91A

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

100V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

99W Tc

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

15V

Transistor Element Material :

SILICON

Pin Count :

3

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

yes

Vgs (Max) :

±15V

JESD-30 Code :

R-PSSO-G2

Series :

Automotive, AEC-Q101, TrenchMOS™

Drain-source On Resistance-Max :

0.084Ohm

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

23A

Operating Mode :

ENHANCEMENT MODE

Published :

2010

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Rise Time :

120ns