BUK964R2-80E118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

4m Ω @ 25A, 10V

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Pulsed Drain Current-Max (IDM) :

740A

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Power Dissipation-Max :

349W Tc

Turn On Delay Time :

70 ns

Series :

Automotive, AEC-Q101, TrenchMOS™

FET Type :

N-Channel

Mounting Type :

Surface Mount

Number of Pins :

3

Power Dissipation :

357W

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Reach Compliance Code :

not_compliant

Max Dual Supply Voltage :

80V

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

123nC @ 5V

Factory Lead Time :

12 Weeks

JESD-609 Code :

e3

Fall Time (Typ) :

115 ns

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Turn-Off Delay Time :

203 ns

Published :

2016

Drain-source On Resistance-Max :

0.0042Ohm

Drain to Source Breakdown Voltage :

80V

Drive Voltage (Max Rds On,Min Rds On) :

5V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Rise Time :

109ns

Input Capacitance (Ciss) (Max) @ Vds :

17130pF @ 25V

Avalanche Energy Rating (Eas) :

485 mJ

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Pin Count :

3

Continuous Drain Current (ID) :

120A

Terminal Form :

Gull wing

Vgs (Max) :

±10V

Gate to Source Voltage (Vgs) :

15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)