BUK9640-100A118
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- Mfr.Part #
- BUK9640-100A118
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- NOW NEXPERIA BUK9640-100A - POWE
- Stock
- 40,939
- In Stock ：
- 40,939
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- Published :
- 2014
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Radiation Hardening :
- No
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 158W
- Max Dual Supply Voltage :
- 100V
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 39m Ω @ 25A, 10V
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Power Dissipation-Max :
- 158W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 3072pF @ 25V
- Rise Time :
- 135ns
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 100V
- Fall Time (Typ) :
- 90 ns
- Turn On Delay Time :
- 20 ns
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 12 Weeks
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 39A
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Vgs (Max) :
- ±15V
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- JESD-30 Code :
- R-PSSO-G2
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 15V
- Number of Terminations :
- 2
- Turn-Off Delay Time :
- 125 ns
- Current - Continuous Drain (Id) @ 25°C :
- 39A Tc
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 48nC @ 5V
- Datasheets
- BUK9640-100A118
Specialized ICs NXP Semiconductors BUK9640-100A,118 Overview
The Specialized ICs NXP Semiconductors BUK9640-100A,118 is an advanced power MOSFET designed for high-efficiency applications. Featuring a low on-resistance of only 39m Ω at 25A, 10V, this component ensures minimal power loss and superior thermal management, making it an ideal choice for power-intensive applications. The device supports a maximum drain-source voltage of 100V, providing robust performance under high voltage conditions. Additionally, its maximum gate-source voltage is ±15V, accommodating a wide range of drive signals. The power MOSFET is packaged in a TO-263-3, D2Pak, which offers excellent power dissipation and space efficiency. With an input capacitance of 3072pF at 25V and a total gate charge of 48nC at 5V, it is optimized for fast switching and responsive operation in power conversion applications.
Key Features
Continuous drain current (ID) of 39A, enabling substantial power handling capability.
Drain-to-source breakdown voltage of 100V, suitable for high-voltage applications.
Turn-off delay time of 125 ns and turn-on delay time of 20 ns, for rapid switching operations.
Gate-source voltage (VGS) of ±15V, allowing flexible gate driving strategies.
Input capacitance of 3072pF at 25V and total gate charge of 48nC at 5V, designed for efficient gate control and fast response times.
Applications
The Specialized ICs NXP Semiconductors BUK9640-100A,118 is extensively used in various applications, emphasizing its versatility and reliability. Key applications include:
- LCD/LED TV power supplies, where efficiency and reliability are paramount.
- Consumer appliances that require robust power management solutions.
- Lighting systems, particularly in high power LED drivers.
- Uninterruptible power supplies (UPS) and AC-DC power supplies, ensuring power continuity and stability.
- Synchronous rectification in ATX 1 Server, Telecom PSU.
- Motor drives and UPS systems, where high current and fast switching are necessary.
- Micro solar inverters, enabling efficient solar energy conversion.
- DC/DC converters for electronic devices, providing stable and efficient voltage conversion.
- Power tools requiring durable and efficient power management.
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