BUK9635-55A118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Number of Pins :

3

Fall Time (Typ) :

73 ns

Turn On Delay Time :

6 ns

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

85W Tc

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 1mA

Vgs (Max) :

±10V

Avalanche Energy Rating (Eas) :

48 mJ

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

32m Ω @ 25A, 10V

Number of Elements :

1

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

10V

Element Configuration :

Single

Radiation Hardening :

No

FET Type :

N-Channel

Surface Mount :

yes

Contact Plating :

Tin

Turn-Off Delay Time :

96 ns

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1173pF @ 25V

JESD-609 Code :

e3

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

55V

Rise Time :

36ns

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

34A

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Max Dual Supply Voltage :

55V

Power Dissipation :

85W

Published :

2011

Operating Mode :

ENHANCEMENT MODE

Series :

Automotive, AEC-Q101, TrenchMOS™

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

12 Weeks