BUK962R5-60E118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Drain to Source Breakdown Voltage :

60V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 5V

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 25A, 5V

Fall Time (Typ) :

128 ns

Case Connection :

DRAIN

Surface Mount :

yes

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

2.1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

357W

Drain-source On Resistance-Max :

0.0025Ohm

Number of Terminations :

2

Vgs (Max) :

±10V

Avalanche Energy Rating (Eas) :

655 mJ

Mounting Type :

Surface Mount

Max Dual Supply Voltage :

60V

Pulsed Drain Current-Max (IDM) :

1019A

Turn-Off Delay Time :

224 ns

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Series :

Automotive, AEC-Q101, TrenchMOS™

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

5V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Published :

2014

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

357W Tc

JESD-30 Code :

R-PSSO-G2

Rise Time :

119ns

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

17450pF @ 25V

FET Type :

N-Channel

Turn On Delay Time :

71 ns

Continuous Drain Current (ID) :

120A

Additional Feature :

AVALANCHE RATED

Terminal Position :

Single

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Contact Plating :

Tin

Number of Pins :

3