BUK9624-55A118
- Mfr.Part #
- BUK9624-55A118
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- NOW NEXPERIA BUK9624-55A - POWER
- Stock
- 1,400
- In Stock :
- 1,400
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- Gate to Source Voltage (Vgs) :
- 10V
- Power Dissipation :
- 105W
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±10V
- Max Dual Supply Voltage :
- 55V
- Current - Continuous Drain (Id) @ 25°C :
- 46A Tc
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Pin Count :
- 3
- Drain-source On Resistance-Max :
- 0.026ohm
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Fall Time (Typ) :
- 80 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 12 Weeks
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 46A
- Number of Elements :
- 1
- Turn On Delay Time :
- 17.5 ns
- Drain to Source Breakdown Voltage :
- 55V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1815pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 21.7m Ω @ 25A, 10V
- Contact Plating :
- Tin
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 105W Tc
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2011
- Turn-Off Delay Time :
- 82.5 ns
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 76 mJ
- Rise Time :
- 104ns
- Datasheets
- BUK9624-55A118

Specialized ICs NXP Semiconductors BUK9624-55A,118 Overview
The Specialized ICs NXP Semiconductors BUK9624-55A,118 is a highly reliable N-channel MOSFET tailored for demanding power management tasks in both industrial and commercial applications. This component excels in environments requiring efficient power conversion and high-switching performance. The device's low on-resistance of 21.7m Ω at 25A ensures minimal power loss and superior thermal management, making it ideal for high efficiency systems. With a robust 55V drain-source breakdown voltage, this MOSFET is designed to handle significant voltages while maintaining stability and performance. The gate-source voltage of 10V allows for precise control over the switching parameters, ensuring that the MOSFET operates within safe limits under varying electrical conditions.
Key Features
The BUK9624-55A,118 offers several distinctive features that make it suitable for advanced electronic systems:
- Avalanche energy rating (Eas) of 76 mJ, indicating its robustness in extreme conditions
- Continuous drain current (ID) of 46A, facilitating high power throughput
- Drain-to-source breakdown voltage of 55V, ensuring reliable operation under high voltage scenarios
- Turn-off delay time of 82.5 ns and turn-on delay time of 17.5 ns, contributing to its efficient switching capabilities
- Minimal input capacitance of 1815pF at 25V, enhancing the response time and frequency performance
Applications
The BUK9624-55A,118 is versatile in application, being ideal for sectors requiring reliable and efficient power handling capabilities. Some of its primary applications include:
- LCD/LED TVs
- Consumer Appliances
- Lighting systems
- Uninterruptible Power Supplies (UPS)
- AC-DC Power Supply units
- Synchronous Rectification for ATX 1 Server, Telecom PSU
- Motor drives
- Micro Solar Inverters
- DC/DC converters
- Power Tools
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