BUK9620-100B,118

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Number of Terminations :

2

Turn-Off Delay Time :

173 ns

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

53.4nC @ 5V

Power Dissipation :

203W

JESD-609 Code :

e3

Series :

Automotive, AEC-Q101, TrenchMOS™

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

5657pF @ 25V

Continuous Drain Current (ID) :

63A

Drain to Source Breakdown Voltage :

100V

Fall Time (Typ) :

77 ns

Avalanche Energy Rating (Eas) :

222 mJ

Contact Plating :

Tin

Power Dissipation-Max :

203W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Max Dual Supply Voltage :

100V

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

45 ns

Published :

2009

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

Number of Elements :

1

Terminal Form :

Gull wing

Rise Time :

116ns

Gate to Source Voltage (Vgs) :

15V

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

18.5m Ω @ 25A, 10V

Current - Continuous Drain (Id) @ 25°C :

63A Tc

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Pin Count :

3

Vgs (Max) :

±15V

Vgs(th) (Max) @ Id :

2V @ 1mA

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Reach Compliance Code :

not_compliant