BUK9615-100A,118

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Vgs (Max) :

±10V

Element Configuration :

Single

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

75A Tc

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

FET Type :

N-Channel

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

14.4m Ω @ 25A, 10V

Number of Elements :

1

Pin Count :

3

Max Dual Supply Voltage :

100V

Input Capacitance (Ciss) (Max) @ Vds :

8600pF @ 25V

Rise Time :

130ns

Radiation Hardening :

No

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Turn-Off Delay Time :

400 ns

Case Connection :

DRAIN

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Vgs(th) (Max) @ Id :

2V @ 1mA

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Series :

Automotive, AEC-Q101, TrenchMOS™

Power Dissipation-Max :

230W Tc

Power Dissipation :

230W

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Factory Lead Time :

16 Weeks

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

75A

Turn On Delay Time :

45 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Breakdown Voltage :

100V

Published :

2011

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

10V

Fall Time (Typ) :

130 ns

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V