BUK9614-55A118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Turn-Off Delay Time :

166 ns

Vgs (Max) :

±10V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

149W Tc

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

73A Tc

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Number of Terminations :

2

Fall Time (Typ) :

125 ns

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Element Configuration :

Single

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

13m Ω @ 25A, 10V

Max Dual Supply Voltage :

55V

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

266A

Gate to Source Voltage (Vgs) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

3307pF @ 25V

JESD-30 Code :

R-PSSO-G2

Rise Time :

152ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Published :

2011

Factory Lead Time :

16 Weeks

Vgs(th) (Max) @ Id :

2V @ 1mA

Turn On Delay Time :

26 ns

Radiation Hardening :

No

Number of Elements :

1

Continuous Drain Current (ID) :

73A

Surface Mount :

yes

Drain to Source Breakdown Voltage :

55V

Power Dissipation :

149W

FET Type :

N-Channel

Series :

Automotive, AEC-Q101, TrenchMOS™