BUK9614-55A,118

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Contact Plating :

Tin

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

73A

Pin Count :

3

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Code :

EAR99

Series :

Automotive, AEC-Q101, TrenchMOS™

Factory Lead Time :

16 Weeks

FET Type :

N-Channel

Vgs (Max) :

±10V

Mounting Type :

Surface Mount

Turn On Delay Time :

26 ns

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

10V

Fall Time (Typ) :

125 ns

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

73A Tc

Pulsed Drain Current-Max (IDM) :

266A

Rise Time :

152ns

Published :

2011

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

3307pF @ 25V

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

55V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

13m Ω @ 25A, 10V

Vgs(th) (Max) @ Id :

2V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

2

Power Dissipation-Max :

149W Tc

JESD-609 Code :

e3

Max Dual Supply Voltage :

55V

Element Configuration :

Single

Number of Elements :

1

Surface Mount :

yes

Power Dissipation :

149W

Turn-Off Delay Time :

166 ns