BUK9610-100B,118
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- Mfr.Part #
- BUK9610-100B,118
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 75A D2PAK
- Stock
- 12,658
- In Stock ：
- 12,658
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Contact Plating :
- Tin
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 250 ns
- Drain to Source Breakdown Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 629 mJ
- Power Dissipation-Max :
- 300W Tc
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 15V
- Drain Current-Max (Abs) (ID) :
- 75A
- Published :
- 2011
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSSO-G2
- Rise Time :
- 110ns
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 60 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 11045pF @ 25V
- Fall Time (Typ) :
- 94 ns
- Factory Lead Time :
- 12 Weeks
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 110A
- Case Connection :
- DRAIN
- Number of Pins :
- 3
- Max Dual Supply Voltage :
- 100V
- Power Dissipation :
- 300W
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Radiation Hardening :
- No
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 9.7mOhm
- Vgs (Max) :
- ±15V
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 9.7m Ω @ 25A, 10V
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 86nC @ 5V
- Surface Mount :
- yes
- Number of Elements :
- 1
- Datasheets
- BUK9610-100B,118
N-Channel Tape & Reel (TR) 9.7m Ω @ 25A, 10V ±15V 11045pF @ 25V 86nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK9610-100B,118 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 629 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 11045pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 110A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.A device can conduct a maximum continuous current of [75A] according to its drain current.It is [250 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 60 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 15V.As it is powered by 100V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
BUK9610-100B,118 Features
the avalanche energy rating (Eas) is 629 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 250 ns
BUK9610-100B,118 Applications
There are a lot of Nexperia USA Inc.
BUK9610-100B,118 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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