BUK9610-100B,118
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- Mfr.Part #
- BUK9610-100B,118
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 75A D2PAK
- Stock
- 12,658
- In Stock ：
- 12,658
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Resistance :
- 9.7mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 86nC @ 5V
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 11045pF @ 25V
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 94 ns
- Drain to Source Breakdown Voltage :
- 100V
- Factory Lead Time :
- 12 Weeks
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Max Dual Supply Voltage :
- 100V
- Surface Mount :
- yes
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Drain Current-Max (Abs) (ID) :
- 75A
- Power Dissipation-Max :
- 300W Tc
- Continuous Drain Current (ID) :
- 110A
- Rds On (Max) @ Id, Vgs :
- 9.7m Ω @ 25A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 110ns
- Gate to Source Voltage (Vgs) :
- 15V
- Published :
- 2011
- Power Dissipation :
- 300W
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Turn-Off Delay Time :
- 250 ns
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 629 mJ
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Number of Pins :
- 3
- Turn On Delay Time :
- 60 ns
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Contact Plating :
- Tin
- Number of Terminations :
- 2
- Vgs (Max) :
- ±15V
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Datasheets
- BUK9610-100B,118
N-Channel Tape & Reel (TR) 9.7m Ω @ 25A, 10V ±15V 11045pF @ 25V 86nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK9610-100B,118 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 629 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 11045pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 110A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.A device can conduct a maximum continuous current of [75A] according to its drain current.It is [250 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 60 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 15V.As it is powered by 100V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
BUK9610-100B,118 Features
the avalanche energy rating (Eas) is 629 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 250 ns
BUK9610-100B,118 Applications
There are a lot of Nexperia USA Inc.
BUK9610-100B,118 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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