BUK9606-55B118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Published :

2009

Element Configuration :

Single

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

75A

Gate to Source Voltage (Vgs) :

15V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Continuous Drain Current (ID) :

146A

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 1mA

Pulsed Drain Current-Max (IDM) :

587A

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Peak Reflow Temperature (Cel) :

245

ECCN Code :

EAR99

Series :

Automotive, AEC-Q101, TrenchMOS™

Pin Count :

3

Factory Lead Time :

16 Weeks

Drain to Source Breakdown Voltage :

55V

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

7565pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Vgs (Max) :

±15V

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

679 mJ

Rise Time :

95ns

Mounting Type :

Surface Mount

FET Type :

N-Channel

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Power Dissipation :

258W

Rds On (Max) @ Id, Vgs :

5.4m Ω @ 25A, 10V

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn-Off Delay Time :

117 ns

Case Connection :

DRAIN

Power Dissipation-Max :

258W Tc

Fall Time (Typ) :

106 ns

Max Dual Supply Voltage :

55V

Surface Mount :

yes

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Drain-source On Resistance-Max :

0.0064Ohm

Turn On Delay Time :

37 ns