BUK9575-100A,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

100V

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.084Ohm

Package / Case :

TO-220-3

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

100V

Drain Current-Max (Abs) (ID) :

23A

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2V @ 1mA

Vgs (Max) :

±15V

Mounting Type :

Through Hole

Series :

TrenchMOS™

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Compliant

Current - Continuous Drain (Id) @ 25°C :

23A Tc

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1704pF @ 25V

Rds On (Max) @ Id, Vgs :

72m Ω @ 10A, 10V

HTS Code :

8541.29.00.75

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

91A

Power Dissipation-Max :

99W Tc

Number of Elements :

1

Terminal Position :

Single

Surface Mount :

No

Avalanche Energy Rating (Eas) :

100 mJ